场效应MOS管AK3400参数5.8A30V封装SOT-23.pdf免费

AK3400 AK N-Channel Enhancement Mode Power MOSFET Description D The AK3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S General Features Schematic diagram ● V = 30V,I = 5.8A DS D RDS(ON) 57mΩ @ VGS=2.5V RDS(ON) 41mΩ @ VGS=4.5V RDS(ON) 35mΩ @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● PWM applications ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3400 Ẋ AK3400 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed (Note 1)