场效应MOS管AK20P07N参数-7A-20V封装SOT-23-6L.pdf免费

AK20P07N AK P-Channel Enhancement Mode Power MOSFET Description The AK20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram ●V = -20V,I =-7A DS D RDS(ON) 45mΩ @ VGS=-2.5V RDS(ON) 35mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ●High Power and current handing capability ●Surface mount package ●Pb free terminal plating ●RoHS compliant ●Halogen free Application ●PWM application ●Load switch Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 20P07N AK20P07N SOT23-6L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25 ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID -7 A Drain Current-Pulsed (Note 1) IDM -30 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ ,TSTG -55 To 150