场效应MOS管AK01P18参数-18A-100V封装TO-220.pdf免费

AK01P18 AK P-Channel Enhancement Mode Power MOSFET Description The AK01P18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● V =-100V,I =-18A DS D RDS(ON) 100mΩ @ VGS=-10V (Typ:85mΩ) Schematic diagram RDS(ON) 120mΩ @ VGS=-10V (Typ:95mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Power management in notebook computer ● Portable equipment and battery powered systems 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE01P18 NCE01P18 TO-220-3L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -18 A Drain Current-Continuous(T =100℃) I (100℃) -12 A C D Pulsed Drain Current