场效应MOS管AK2004Y参数4A20V封装SOT-23-3L.pdf免费

AK2004Y AK N-Channel Enhancement Mode Power MOSFET Description The AK2004Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =20V,I =4A DS D RDS(ON) 24mΩ @ VGS=4.5V Schematic diagram RDS(ON) 32mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2004Y AK2004Y SOT23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 4 A Drain Current-Continuous(T =100℃) I (100℃) 2.8 A C D Pulsed Drain Current IDM 20 A