场效应MOS管AK6003M参数3A60V封装SOT-89.pdf免费

AK6003M AK N-Channel Enhancement Mode Power MOSFET Description D The AK6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other switching application. S General Feature Schematic diagram ● V =60V,I =3.0A DS D RDS(ON) 100mΩ @ VGS=10V RDS(ON) 120mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery switch ●DC/DC converter Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 6003M AK6003M SOT-89-3L Ø180mm 12mm 1000units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3 A Drain Current-Pulsed (Note 1) IDM 10