AN0003-GaN电源开关的印刷电路板布局和探测.pdfVIP

Printed Circuit Board Layout and Probing for GaN Power Switches Transphorm, Inc Zan Huang, Felix Recht and Yifeng Wu Application Note AN-0003 This document describes best practices for printed circuit board layout and probing of Transphorm GaN Power Switches. Best practices for high switching speed design include low inductive board layout and proper referencing of signals to ground planes. Additionally, low inductive ground and signal connections are important for proper measurement results. CONTROL #: AN-0003 PCB LAYOUT AND PROBING FOR GA N POWER SWITCHES TABLE OF CONTENTS 1 Introduction 3 2 Layout Consideration in a PFC board 3 2.1 Power loop 3 2.2 Gate Loop/ Gate Drive Circuit 5 3 Probing Considerations 6 3.1 Accurate Probing 6 3.2 Avoid Introducing Additional Parasitics 7 4 Conclusion 7 REVISION 2.0.0 PROPRIETARY CONFIDENTIAL INFORMATION 2 CONTROL #: AN-0003 PCB LAYOUT AND PROBING FOR GA N POWER SWITCHES 1 INTRODUCTION Transphorm Gallium Nitride (GaN) Switches provide significant advantages over silicon (Si) Superjunction MOSFETs with lower gate charge, faster switching speeds and smaller reverse recovery charge. GaN Switches exhibit in-circuit switching speeds in excess of 150 V/ns and can be even pushed up to 500V/ns, compared to current silicon technology usually switching at rates less than 50V/ns. The