5STP_18H4200 最详细说明书.pdfVIP

VDRM = 4200 V Phase Control Thyristor IT(AV)M = 2075 A IT(RMS) = 3260 A 3 ITSM = 32×10 A 5STP 18H4200 VT0 = 0.96 V rT = 0.285 mW Doc. No. 5SYA 1046-03 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate Blocking Maximum rated values 1) Parameter Symbol Conditions 5STP 18H4200 Unit Max repetitive peak forward VDRM, f = 50 Hz, tp = 10 ms, 4200 V and reverse blocking voltage VRRM Tvj = 5…125°C, Note 1 VAK VDRM,VRRM t p t Critical rate of rise of dv/dtcrit Exp. to 2810 V, Tvj = 125°C 1000 V/µs commutating voltage Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current IDRM VDRM, Tvj = 125°C 300 mA Reverse leakage current IRRM VRRM, Tvj = 125°C 300 mA Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C Mechanical data Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Mounting force FM