5STP24H2800 最详细说明书.pdfVIP

VDSM = 2800 V Phase Control Thyristor ITAVM = 2625 A ITRMS = 4120 A ITSM = 43000 A 5STP 24H2800 VT0 = 0.85 V r = 0.160 mΩΩ T ΩΩ Doc. No. 5SYA1047-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate Blocking Part Number 5STP 24H2800 5STP 24H2600 5STP 24H2200 Conditions V V 2800 V 2600 V 2200 V f = 50 Hz, t = 10ms DRM RRM p V 3000 V 2800 V 2400 V t = 5ms, single pulse RSM1 p IDRM ≤ 300 mA VDRM T = 125°C IRRM ≤ 300 mA VRRM j dV/dt 1000 V/µs Exp. to 0.67 x V , T = 125°C crit DRM j Mechanical data FM Mounting force nom. 50 kN min. 45 kN max. 60 kN a Acceleration Device unclamped 50 m/s2 2 Device clamped 100 m/s m Weight 0.9 kg DS Surface creepage distance 36 mm Da Air strike