RS Components 其他智能设备 晶体管 GT50J301(Q) 使用说明.pdfVIP

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCES 600 V Gate−Emitter Voltage VGES ±20 V DC IC 50 Collector Current A 1ms ICP 100 DC IF 50 JEDEC ⎯ Forward Current A 1ms IFM 100 JEITA ⎯ Collector Power Dissipation PC 200 W TOSHIBA 2-21F2C (Tc = 25°C) Junction Temperature Tj 150 °C Weight: 9.75 g (typ.) Storage Temperature Tstg −55~150 °C Screw Torque ― 0.8 N · m Note: Using continuously under heavy loads (e.g. the applic