RS Components 其他智能设备 晶体管 FGHL50T65SQDT 使用说明.pdfVIP

IGBT - Field Stop, Trench 650 V, 50 A Product Preview FGHL50T65SQDT Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 50 A, 650 V VCESat = 1.47 V (Typ.) Features • Maximum Junction Temperature : T = 175°C J C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.47 V (Typ.) @ IC = 50 A • 100% of the Parts tested for ILM(1) G • High Input Impedance • Fast Switching E • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Typical Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC Table 1. MAXIMUM RATING TO−247−3LD Symbol Rating Value Unit CASE 340CX VCES Collector to Emitter Voltage 650 V MARKING DIAGRAM VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 IC Collector Current @ TC = 25°C 100 A