RS Components 其他智能设备 晶体管 FGH60T65SQD-F155 使用说明.pdfVIP

Product Overview FGH60T65SQD-F155: 650 V, 60 A Field Stop Trench IGBT For complete documentation, see the data sheet. Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: T =175°C J • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: V =1.6 V(Typ.) @ I = 60 A CE(sat) C • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC Part Electrical Specifications Product Compliance Status V(BR)C IC VCE(sa VF Eoff Eon Trr Irr Gate Short EAS PD Co- Pack ES Max t) Typ Typ Typ Typ Typ Typ Char Circui Typ Max Pack age Typ (A) (V) (V) (mJ) (mJ) (ns) (A) ge t (mJ) (W) aged Type (V) Typ Withs Diode (nC) tand (µs) FGH60T65SQD-F155 Pb-free Active 650 60 1.6 2.3 0.167 0.585 34.6 null 79