RS Components 电工电料 达林顿管 2N6388G 使用说明.pdfVIP

2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc DARLINGTON NPN SILICON VCEO(sus) = 60 Vdc (Min) − 2N6387 POWER TRANSISTORS = 80 Vdc (Min) − 2N6388 8 AND 10 AMPERES • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC 65 WATTS, 60 − 80 VOLTS = 5.0 Adc − 2N6387, 2N6388 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • TO−220AB Compact Package 4 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit 1 2 Collector−Emitter Voltage 2N6387 VCEO 60 Vdc 3 2N6388 80 TO−220 Collector−Base Voltage 2N6387 VCB 60 Vdc CASE 221A 2N6388 80 STYLE 1 Emitter−Base Voltage