RS Components 其他网络设备 MOSFET 驱动器 IR2011SPBF 使用说明.pdfVIP

Data Sheet No.PD60217 revB IR2011(S) (PbF) HIGH AND LOW SIDE DRIVER Features Product Summary Floating channel designed for bootstrap operation Fully operational up to +200V VOFFSET 200V max. Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10V to 20V Independent low and high side channels IO+/- 1.0A / 1.0A typ. Input logicHIN/LIN active high Undervoltage lockout for both channels VOUT 10 - 20V 3.3V and 5V input logic compatible CMOS Schmitt-triggered inputs with pull-down ton/off 80 60 ns typ. Matched propagation delay for both channels Also available LEAD-FREE (PbF) Delay Matching 20 ns max. Applications Audio Class D amplifiers Packages High power DC-DC SMPS converters Other high frequency applications Description The IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, idealforAudio Class D and DC-DC converter 8-Lead SOIC applications. Logic inputs are compatible with standard CMOS or LSTTL output, down IR20 11S to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Pr