半导体器件物理ms contact part8.pdfVIP

JFET and MESFET  Buried channel device  I-V characteristics  Velocity-Electric field relationship  Microwave performance  Device structures JFET and MESFET  Buried channel device Recall device structure for MOSFET  Differenc ween MOSFET and JFET -Bias can not approach the flatband situation for JFET or MESFET -Double channel formed when bias high enough for MOSFET (buried channel) JFET and MESFET  Advantages -Hot carrier injection -Charge trap  Disadvantages -Gate voltage limitation JFET and MESFET  Comparison between JFET and MESFET MESFET: -Simpler process: low temperature formation of MS; -Diffusion and im ntation for PN junction; -Low gate and IR drop along the channel width are factors for high frequency applications -MS has a better process control in fabrication of short channel length; -MS is a heat sink for power device applications JFET and MESFET JFET: -Robust junction, higher breakdown and power capability -high build-in potential for possible enhancement mode device application -Higher build-in potential for preventing gate current -Difficulty on formation of good Schottky barrier on some p-type material -More gate configurations: heterojunction or buffered-layer gate for improving certain aspects of performance JFET and MESFET  Device structure -- Dra hannel-Source -- Gate junction P-N junction for JFET Schottky junction for MESFET -- Working mechanism Voltage-controlled resistor JFET and MESFET  Normally-on device Vg=Vd=0 Vg=0; Vd positive ??VgVt; Vd positive VgVt; Vd positive JFET and MESFET  I-V characteristics -Linear region Id proportional to Vd -Nonlinear region -Saturation region Current saturated JFET and MESFET  Deriving I-V characteristics Assumptions: - Uniform do channel - GC