意法esda6v1-5m6深圳恒锐丰科技.pdf

ESDA6V1M6,ESDA6V1-5M6

4-and5-lineTransil™arraysforESDprotection

Features

■HighESDprotectionlevel

■Highintegration

■Suitableforhighdensityboards

■4unidirectionalTransildiodesMicroQFNpackage

(ESDA6V1M6)

■5unidirectionalTransildiodes

(ESDA6V1-5M6)Figure1.Functionaldiagram

■BreakdownVoltageVBR=6.1VminESDA6V1M6

■Highpeakpowerdissipation:

100Watts8/20µsI/O116I/O5

■Lowleakagecurrent500nA

GND25GND

■Lowdiodecapacitance(70pFtypat0V)

²I/O234I/O3

■VerysmallPCBarea:1.45mm

■500micronspitch

■Lead-freepackageESDA6V1-5M6

Complieswiththefollowingstandards:I/O116I/O5

■IEC61000-4-2

GND25I/O4

–15kV(airdischarge)

–8kV(contactdischarge)I/O234I/O3

■MILSTD883G-Method3015-7:class3B

–8kV(humanbodymodel)

Description

ApplicationsTheESDA6V1xxM6aremonolithicarrays

WheretransientovervoltageprotectioninESDdesignedtoprotectupto4or5linesagainstESD

sensitiveequipmentisrequired,suchas:transients.

■Computers