宏盛微半导体HYG060N15NS1B.pdf

HYG060N15NS1P/B

N-ChannelEnhancementModeMOSFET

FeaturePinDescription

150V/175A

RDS(ON)5.5mΩ(typ.)@VGS10V

100%AvalancheTested

ReliableandRugged

Lead-FreeandGreenDevicesAvailable

(RoHSCompliant)

TO-220FB-3LTO-263-2L

Applications

PowerSwitchingapplication

UninterruptiblePowerSupply

MotorControl

OrderingandMarkingInformationN-ChannelMOSFET

PackageCode

PBP:TO-220FB-3LB:TO-263-2L

G060N15G060N15

DateCode

XYMXXXXXXXYMXXXXXX

XYMXXXXXX

Note:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-Freerequire-

mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green”

tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneous

materialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

V1.1

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HYG060N15NS1P/B

AbsoluteMaximumRatings

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