FUJITSU 并行接口存储芯片MB85R256H系列英文资料.pdf

FUJITSUMICROELECTRONICS

DS05-13106-5E

DATASHEET

MemoryFRAM

CMOS

256K(32K×8)Bit

MB85R256H

■DESCRIPTIONS

TheMB85R256HisanFRAM(FerroelectricRandomAccessMemory)chipinaconfigurationof32,768wordsx

8bits,usingtheferroelectricprocessandsilicongateCMOSprocesstechnologiesforformingthenonvolatile

memorycells.

TheMB85R256Hisabletoretaindatawithoutusingaback-upbattery,asisneededforSRAM.

ThememorycellsusedintheMB85R256Hcanbeusedfor1010read/writeoperations,whichisasignificant

improvementoverthenumberofreadandwriteoperationssupportedbyFlashmemoryandE2PROM.

TheMB85R256Husesapseudo-SRAMinterfacecompatiblewithconventionalasynchronousSRAM.

■FEATURES

•Bitconfiguration:32,768wordsx8bits

•Highendurance10BillionRead/writes

•PeripheralcircuitCMOSconstruction

•Operatingpowersupplyvoltage:2.7Vto3.6V

•Operatingtemperaturerange:−40°Cto+85°C

•Dataretention:10years(+70°C)

•Package:28-pin,SOPflatpackage

:28-pin,TSOP(1)flatpackage

Copyright©2006-2009FUJITSUMICROELECTRONICSLIMITEDAllrightsreserved

2009.7

MB85R256H

■PINASSIGNMENTS

(TOPVIEW)

A14128VCC

A12227WE

A7326A13

A6425A8

A5524A9