Computer Simulation from Electron Beam Lithography to OpticaVIP

Computer Simulation from Electron Beam Lithography to Optical Lithography Zheng Cui Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX, UK, E-mail: z.cui@rl.ac.uk ABSTRACT 2. ELECTRON PROXIMITY EFFECT Simulation of electron beam lithography and optical lithography has been combined to investigate the influence Electron proximity effect has been a major obstacle of a distorted photomask feature on final photoresist image. for achieving fine resolution in electron beam lithography. Unlike the previous optical lithography simulation which As charged particles, electrons undergo forward and was based on ideal mask design, the combined simulation backward scattering when exposing a resist layer on a has shown that mask distortion due to electron proximity substrate. Fig.1 shows typical electron trajectories effect play an important role in worsening the optical simulated by the Monte Carlo simulation package proximity effect, which is particularly critical at MOCASEL. The simulation assumed electrons with 10keV subresolution optical lithography. energy exposing on a resist coated photomask substrate (chrome on quartz plate). 1. INTRODUCTION Optical lithography is a key step in micro device fabrication. Starting from a photomask, the final feature dimension