氮化镓-HVPE生长.pdfVIP

Previous Page 2.3 One-Step Lateral Overgrowth (IS-ELO) In principle, it would be possible to achieve full coalescence of the pyramids shown in Fig. 2.6 after a long growth run. Actually, after 7 h of growth, coalescence was ob- tained for some part (Fig. 2.8), however, the surface was not smooth enough for any device fabrication [105]. Tiny fluctuations in the gaseous flows enhance the growth of the larger pyramids (Ostwald ripening). Currently, all the ELO technology relies on stripes opening along well-defined crystallographic directions. In the IS-ELO, a single grow