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Retention properties in the
metal-ferroelectric-insulator-silicon (MFIS) structure
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studied by piezoresponse force microscopy#
Zhang Zhonghua1, Zhong Xiangli1, Zhang Yi2, Wang Jinbin2, Zhou Yichun2**
(1. Faculty of Material, Optoelectronic and Physics, Xiangtan University,
HuNan XiangTan 411105;
2. Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of
Education, Xiangtan University, HuNan XiangTan 411105)
Abstract: Metal-ferroelectric-insulator-silicon (MFIS) structures with SrBi2Ta2O9 as ferroelectric thin
film and HfO2 as insulating buffer layer were fabricated by pulsed laser deposition. The interfaces and
memory window of the MFIS structure were investigated. Piezoresponse force microscopy was used to
observe the change of domain images in order to investigate the retention characteristics, which
demonstrated that the MFIS structure experiences retention loss via a random walk type process,
identified by a stretched exponential decay model. The corresponding mechanism was discussed based
on time-dependent depolarization field.
Keywords: Ferroelectric-gate field-effect transistor; MFIS; Retention characteristics; Piezoresponse
force microscopy
0 Introduction
Ferroelectric-gate field-effect transistor (FeFET) is a promising device for nonvolatile
memory because of its nondestructive readout, low power consumption, and high-integration
density.1-3 However, such ideal device is commercially not available due to its serious retention
loss. The retention loss of FeFET is referred to the decrease of its on-state drain current and the
increase of its off-state drain current with retention time, which is determined by the decrease of
effective gate field caused by the domain backswitching in the metal-ferroelectric-insulator-silicon
(MFIS) or metal-ferroelectric-silicon (MFS) key structure of FeFET.4 Therefore, the studies on the
domain evolution of MFIS or MFS structure in the retention process can be very he
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