基于PSD的薄膜增强古斯—汉欣位移测试系统研究.doc

基于PSD的薄膜增强古斯—汉欣位移测试系统研究 摘要 当光从光密媒质入射到光疏媒质界面发生全发射时，由于消失波的特点便产生古斯-汉欣位移。例如，假定媒质1中有一个光束以入射角向两媒质组成的界面入射，而界面两侧的媒质折射率为,入射角大于临界角即；那么几何光学预期将发生金反射。但在实际上，光束进入了媒质2并在与界面平行方向前行一段距离，然后才返回媒质1。这段距离就是古斯—汉欣位移。在单界面的全反射和双棱镜结构的受抑圈内反射中，古斯-汉欣位移量只能达到波长的量级，在实验中很难对其进行探测。如果在折射率较高的电介质基层底上镀一层折射率较低的电介质薄膜，并且恰当选择基底内光束的入射角，使得光束在基底—介质膜界面上折射到薄膜内、在薄膜—空气界面上全反射，那么反射光束的古斯—汉欣位移在一定条件上会得到共振增强。 本论文基于玻璃棱镜/电介质薄膜/光疏介质结构的特点，从理论和方法上重点研究了在单反射情况下利用电介质薄膜增强古斯-汉欣位移。采用PSD技术直接地测量了这种古斯—汉欣位移随随电介质薄膜厚度的变化，测量结果与理论预言吻合得较好。 关键词：古斯—汉欣位移 电介质薄膜 PSD Abstract：It happened to produce the Goos-Hanchen shift because of the wave of the characteristics vanish ,When light from dense medium light incident to light hydrophobic medium interface .For example，if a beam of light hits an interface between two mediums with indices of refraction under an angle ，geometrical optics predicts total reflection of the incoming beam . But in reality，the beam pentrates into the second medium and travels for some distance parallel to the interface beforebeing scattered back into the first medium．This is the Goos-Hanchen shift .The Goos-Hanchen (GH) shift that occurs in single-interface reflection and the frustrate-total-internal reflection is only of the order of the wavelength . The Goos-Hanchen shift of reflected beam is resonance enhanced under some conditions when the incident beam transmits from the high-refractive index prism to the low-refractive index dielectric thin-film and is totally reflected from the film-air interface . In this paper,we based on the glass prism/dielectric film/light hydrophobic medium structure characteristics, from theory and method in the research on the key shoot cases using dielectric film enhance the Goos-hanchen shift .The GH shift versus the fiIm thickness is directly measured by PSD technology.The experimental measurements confirm the theoretical prediction . Keyword : Goos-hanchen shift Thin-film /dielectric PSD1 绪论 1.1 研究的目的和意义 光束在光密介质与光疏介