发光二极管--电子信息工程(英文翻译).docVIP

大连理工大学城市学院 本科生毕业设计（论文） 外文翻译 学 院：电子与自动化学院 专 业： 电子信息工程 学 生： 丁 琳 指导教师： 马 彧 完成日期： 2010年5月30日 Light-emitting diode Discoveries and early devices Electroluminescence was discovered in 1907 by the British experimenter H. J. Round of Marconi Labs, using a crystal of silicon carbide and a cats-whisker detector. Russian Oleg Vladimirovich Losev independently reported on the creation of an LED in 1927. His research was distributed in Russian, German and British scientific journals, but no practical use was made of the discovery for several decades.Rubin Braunstein of the Radio Corporation of America reported on infrared emission from gallium arsenide (GaAs) and other semiconductor alloys in 1955. Braunstein observed infrared emission generated by simple diode structures using gallium antimonide (GaSb), GaAs, indium phosphide (InP), and silicon-germanium (SiGe) alloys at room temperature and at 77 kelvin. In 1961, experimenters Robert Biard and Gary Pittman working at Texas Instruments, found that GaAs emitted infrared radiation when electric current was applied and received the patent for the infrared LED. The first practical visible-spectrum (red) LED was developed in 1962 by Nick Holonyak Jr., while working at General Electric Company. Holonyak is seen as the father of the light-emitting diode. M. George Craford, a former graduate student of Holonyak, invented the first yellow LED and improved the brightness of red and red-orange LEDs by a factor of ten in 1972. In 1976, T.P. Pearsall created the first high-brightness, high efficiency LEDs for optical fiber telecommunications by inventing new semiconductor materials specifically adapted to optical fiber transmission wavelengths. Up to 1968 visible and infrared LEDs were extremely costly, on the order of US $200 per unit, and so had little practical application. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide in 1968 to produ