基于弱外延生长有机薄膜晶体管研究.pdfVIP

Applied Physics 应用物理, 2013, 3, 50-55 doi:10.12677/app.2013.32010 Published Online March 2013 (/journal/app.html) * The Research of OTFTs Based on Weak Epitaxy Growth # Fei Hong , Li Tan, Qifeng Zhu, Changjiang Xiang, Xiaodong Guo, Jianfeng Shen New Display Technology Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai Email: #hongf@ Received: Aug. 16th th th , 2012; revised: Aug. 24 , 2012; accepted: Sep. 10 , 2012 Abstract: OTFTs were prepared by the method of WEG (Weak Epitaxy Growth). The results showed that substrate temperature strongly affected the growth morphology of p-6P inducement layer, and the relationship between WEG- OTFTs device characteristics and the morphology of p-6P inducement layer. Furthermore, OTFTs device performance depending on the thickness of p-6P inducement layer was disclosed. We found that as the p-6P thickness rose up con- tinuously, the WEG-OTFTs mobility increased at first then decreased, and increased again and then decreased at last. The maximum field effect mobility we obtained was 1.03 cm2/Vs at the conditions of p-6P layer thickness of 2 nm and the substrate temperature of 180˚C. Keywords: Organic Thin Film Transistor; Weak Epitaxy Growth; p-6P; Phthalocyanines 基于弱外延生长的有机薄膜晶体管的研究* # 洪 飞 ，谭 莉，朱棋锋，向长江，郭晓东，申剑锋 上海中科高等研究院新型显示技术研究中心，上海 Email: #hongf@ 收稿日期：2012 年 8 月 16 日；修回日期：2012 年 8 月 24 日；录用日期：2012 年 9 月 10 日 摘 要：采用弱外延生长(Weak Epitaxy Growth, WEG)的方法制备OTFTs，研究了不同衬底温度对诱导层p-6P 生长形貌的影响，以及 WEG-OTFTs 器件特性与诱导层形貌的关系。另外，还研究了诱