MS-EXAFS 与研究闪锌矿构型GaP、GaAs 和GaSb半导体结构.pdfVIP

Zinc-blende Structural GaP, GaAs and GaSb Semiconductors studied by Multiple-scattering x-ray absorption fine * structure * Shiqiang Wei , Zhihu Sun National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei, Anhui 230029, P. R. China sqwei@ Abstract The dependence of multiple-scattering extended x-ray absorption fine structure (MS-EXAFS) effects on the nearest neighbors for GaP, GaAs and GaSb semiconductors with zinc blende structure has been investigated in this work. The overall MS contributions increase rapidly as the nearest neighbors around Ga atoms going from P to As and Sb. The MS effects within the first three coordination shells are dominated by a triangle double-scattering path DS2 (Ga0　B1　B2　Ga0) which contributes an EXAFS signal destructively interfering with that of the second shell single-scattering path (SS2). For GaP with a light element as the first neighbor, its MS contributions are negligible with respect to the SS2 contribution. For GaAs (or GaSb) with a heavier element As (or Sb) as the first neighbor, the MS path of DS2 produces a strong EXAFS oscillation. Based on these results, we present an optimized and simplified MS-EXAFS method