3 - 40 Influence of Highly Charged 209Bi33+ Irradiation on Stress Accumulation in GaN Epi-layer.pdfVIP

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3 - 40 Influence of Highly Charged 209Bi33+ Irradiation on Stress Accumulation in GaN Epi-layer.pdf

3 - 40 Influence of Highly Charged 209Bi33+ Irradiation on Stress Accumulation in GaN Epi-layer.pdf

132 IMP HIRFLAnnualReport 20l2 3—40 InfluenceofHighlyCharged209Bi33+ Irradiation on StressAccumulationinGaN Epi__layer ZhangLiqing,ZhangChonghong,GouJie,YangYitao,SongYin,LiJianjian Meng Yancheng,MaYizhunandZhang Hengqing W hileaHCIimpacton solid surface。thehigh densityofelectronicexcitation producedbypotential energyreleaseofHCIiscomparabletothatproducedbyhighpowerlaserpulsesorswiftheavyion.How— ever,itspotentialenergydepositionwasconfinedinanano

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