3 - 40 Influence of Highly Charged 209Bi33+ Irradiation on Stress Accumulation in GaN Epi-layer.pdfVIP
- 4
- 0
- 约7.43千字
- 约 2页
- 2017-08-22 发布于湖北
- 举报
3 - 40 Influence of Highly Charged 209Bi33+ Irradiation on Stress Accumulation in GaN Epi-layer.pdf
132 IMP HIRFLAnnualReport 20l2
3—40 InfluenceofHighlyCharged209Bi33+ Irradiation
on StressAccumulationinGaN Epi__layer
ZhangLiqing,ZhangChonghong,GouJie,YangYitao,SongYin,LiJianjian
Meng Yancheng,MaYizhunandZhang Hengqing
W hileaHCIimpacton solid surface。thehigh densityofelectronicexcitation producedbypotential
energyreleaseofHCIiscomparabletothatproducedbyhighpowerlaserpulsesorswiftheavyion.How—
ever,itspotentialenergydepositionwasconfinedinanano
您可能关注的文档
- CAI在高中英语教学中的应用.pdf
- DaisyVA支持信息多面体可视分析的智能交互式可视化平台.pdf
- Fingerspelling Recognition by Hand Shape Using Higher-Order Local Auto-Correlation Features.pdf
- GIS人机交互的进展与挑战.pdf
- Iphone界面设计的成功之处.pdf
- owerPoint课件的人机交互类型及其实现.pdf
- PC制造商关注眼控、手控、声控和触控.pdf
- PLC在长江钢铁180m22烧结机项目中的应用.pdf
- Realeyes情感的GoogleAnalytics.pdf
- Robust Feature Extraction for Non-contact Gaze Tracking with Eyeglasses.pdf
原创力文档

文档评论(0)