ITO薄膜的磁控溅射工艺优化研究.pdfVIP

真 　空 　科 　学 　与 　技 　术 　学 　报 第 29 卷 　第 3 期 　　　　　　　　　　　　 　　　　　　 324 CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY 2008 年 5 、6 月 　 ITO 薄膜的磁控溅射工艺优化研究 常天海1 　孙 　凯2 ( 1 华南理工大学电子与信息工程学院　广州 　510640 ;2 上海曙光机械制造厂有限公司 　上海 　200127) Growth of Indium Tin Oxides Fil ms by Magnetron Sputtering 1 2 Chang Tianhai ,Sun Kai ( 1 College of Electronic Commun. Eng . , South China Univ. of Technol . , Guangzhou 510640 , China ; 2S hanghai S huGuang M achinery Works Corp , S hanghai 200127 , China) 　　Abstract 　The influence of growth conditions ,including the substrate temperature , sputtering voltage ,and oxygen partial pressure ,on the microstructures and physical properties of the indiumtinoxides ( ITO) films deposited by mag netron sputtering of a ceramic target was studied . The films ,grown under different growth conditions ,were characterized with ,and Xray photoelectron spectroscopy (XPS) . The results show that the film growth conditions significantly affect the properties of the ITO films. Under the optimized conditions ,that is ,at a substrate temperature of 295 ℃,a sputtering volt age of 250V ,and an oxygen partial pressure of 8 % of the base pressure ,the sheet resistance of the ITO films is 18Ω,and the visible light transmittance is 80 %. 　　Key words 　ITO ,Optical and electrical performance ,Magnetron sputtering ,Optimizing technics ,XPS 　　摘要 　通过磁控溅射陶瓷靶制备 ITO 薄膜的工艺实验 ,研究了基底温度 、溅射电压 、氧含量等主要工艺参数对该薄膜光 电性能的影响 。实验结果表明:当基底加热温度为 295 ℃、溅射电压为 250V 、氧分压 占镀膜室总压力的 8 %即主要工艺参数皆