ZAO薄膜论文：射频反应磁控溅射制备ZAO薄膜及其光电性质研究.docVIP

ZAO薄膜论文：射频反应磁控溅射制备ZAO薄膜及其光电性质研究 【中文摘要】本文采用RF反应磁控溅射技术在不同制备条件下生长了A1掺杂ZnO薄膜(ZAO)。研究了不同ZAO薄膜的晶体结构、表面形貌、电学以及光学性质,为开发ZAO薄膜在TCO材料领域的应用提供实验依据和理论指导。原子力显微镜(AFM)测试结果表明,Al掺杂使薄膜平均粒径明显减小,尺寸分布均匀、致密,表面粗糙度降低；X射线衍射(XRD)结果显示,薄膜沿(002)晶面择优取向生长。当Ar/q流量比为1：1时,薄膜具有相对最好的结晶取向性,并显示沿薄膜表面的压应力及沿C轴张应力。光电性质研究结果表明,薄膜电阻主要由晶界电阻决定,并且导电性随Ar/O2比中O2含量增加而减小。薄膜具有强烈的紫外吸收特性,带隙大多超过3.3eV,可见光区的透明性大于80%,并且透过率和Eg随Ar/O2比中为O2含量的增加而增加,薄膜在紫光区域具有较强的光致发光特性,掺铝使光发射峰增强并蓝移。 【英文摘要】In different condition, the preparation, structure and optical properties of ZAO films prepared by RF-magnetron sputtering were studied.The structural characteristics, application development of ZAO film by RF-magnetron sputtering and the principle and characteristics of Magnetron sputtering were introduced. In our experiments, we observe the properties of the ZAO films through changing the process parameters of the experiments. It is founded that the orientation and the crystallization are more outstanding when the parameters are 200℃,90W, argon oxygen ratio 1:3. When ZnO was doped by aluminum, grain size of the films become small, the conductivity of ZAO film is more better than the films which is not doped by Al.We mainly discussed the optical electrical properties of the ZAO films. The influence of argon oxygen ratio, substrate temperature, sputtering time for ZAO film were discussed. Through a lot of experiments of testing the nature of ZAO films, the excellent preparation parameters were determined, and we got better properties films, and these provided the theory basis and the reference value for the application of ZAO films in the material field of TCO films. 【关键词】ZAO薄膜 磁控溅射 结构 光电性质 【英文关键词】ZAO film magnetron sputtering optical and electrical properties structure 【备注】索购全文请搜“中国学术发表网” 同时提供论文辅导写作和学术期刊论文发表服务。 【目录】射频反应磁控溅射制备ZAO薄膜及其光电性质研究 摘要 5-6 Abstract 6 第1章 引言 9-15 1.1 综述 9-10 1.2 ZAO薄膜的结构特性 10-12 1.3 ZAO薄膜的应用研究进展 12-14 1.3.1 太阳能电池 12 1.3.2 节能视窗和热镜 12-13 1.3.3 低辐射玻璃 13 1.3.4 平板显示器 13 1.3.5 传感器 13 1.3.6 抗静电涂料 13 1.3.7 其他应用 13-