工艺条件对柔性衬底ITO薄膜光电性能的影响.pdfVIP

第28 卷 第6 期 电 子 元 件 与 材 料 Vol.28 No.6 2009 年 6 月 ELECTRONIC COMPONENTS AND MATERIALS Jun. 2009 研 究 与 试 制 工艺条件对柔性衬底 ITO 薄膜光电性能的影响 1 2 1 辛荣生 ，林 钰 ，贾晓林 (1. 郑州大学 材料科学与工程学院, 河南 郑州 450052;2. 河南教育学院 化学系,河南 郑州 450014) 摘要: 采用直流磁控溅射法在柔性衬底上镀制 ITO 透明导电薄膜，全面研究了薄膜厚度、氧气流量、溅射速率、 溅射气压和镀膜温度等工艺条件对 ITO 薄膜光电性能的影响。结果表明，当膜厚大于 80 nm、氧氩体积比为 1 ∶40 、 溅射速率为 5 nm/min、溅射气压在0.5 Pa 左右、镀膜温度为 80～160 ℃时， ITO 薄膜的光电性能较好，其电阻率 –4 Ω ·cm、可见光透光率大于 80%。 小于 5 ×10 关键词: DC 磁控溅射；柔性衬底；ITO 薄膜；电阻率；透光率 doi: 10.3969/j.issn.1001-2028.2009.06.013 中图分类号: TN304.055 文献标识码:A 文章编号:1001-2028 （2009 ）06-0043-03 Effect of technological conditions on the electrical and optical properties of flexible ITO films 1 2 1 XIN Rongsheng , LIN Yu , JIA Xiaolin ( 1. College of Material Science and Engineering, Zhengzhou University, Zhengzhou 450052, China ；2. Department of Chemistry ， Henan Education Institute, Zhengzhou 450014, China ) Abstract: ITO transparent conductive thin films were deposited on flexible substrates using DC magnetron sputtering method. The effects of technological conditions (such as the film thickness, the oxygen flux, the sputtering speed, the sputtering pressure and the temperature etc.) on the electrical and optical properties of ITO films were studied comprehensively. The results show that an optimum condition to prepare ITO films can be obtained, in which the film