12 第十二讲 视频3.pdfVIP

Physics of Semiconductor Devices (双语) 李聪 Email:cong.li@mail.xidian.edu.cn Tel:801 Add: 老校区新科技楼503室  The sequence of manufacture starts with the ion implant and then the growth of the thin oxide above the future channels. Next the n+ diffusions for the source and drain of each transistor are performed. Then more silicon is deposited over the whole slice with those regions needed to make gates and contacts to source and drain being preserved while the rest is etched away. This silicon is polycrystalline, is known as polysilicon, and is not suitable for the base or channel of transistors. The silicon is serving here as a conductor in place of another metal. The polysilicon is then covered with a deposited (not grown) layer of SiO2 through which windows are opened for the upper layer of metal used for interconnections. Where transistor action is not required the oxide is much thicker so that unwanted channels are not formed.  The sequence of manufacture starts with the ion implant and then the growth of the thin oxide above the future channels.  Ion implant ：离子注入  翻译：工艺过程首先从离子注入开始，然后在以后要形成 沟道的位置生长薄氧化层。  Next the n+ diffusions for the source and drain of each transistor are performed. +  翻译：接着，进行每个晶体管源、漏区的n 扩散。  Then more silicon is deposited over the whole slice with those regions needed to make gates and contacts to source and drain being preserved while the rest is etched away.  Deposit ：存款，淀积  Preserved ：保留的  Etch ：刻蚀  翻译：然后在整个晶片上淀积一层硅，除了作为栅区以及与源漏 的接触区外，其余部分淀积的硅全部腐蚀掉。   This silicon is polycrystalline, is known as polysilicon, and is not suitable for the base or channel of transistors.  Base ：基区  Polysilicon ：多晶硅  翻译：这种淀积的硅是多晶结构，称为多晶硅，不适合用作晶体 管的基区或沟道区。  The silicon is serving here as a conductor in place of another metal.  in place of ：代替  翻译：这里多晶硅的作用是代替另一种金属作导体用。  The poly