半导体纳米线综述论文【荐】.pdfVIP

Home Search Collections Journals About Contact us My IOPscience Semiconductor nanowires This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2006 J. Phys. D: Appl. Phys. 39 R387 (/0022-3727/39/21/R01) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 17 The article was downloaded on 24/08/2010 at 07:02 Please note that terms and conditions apply. INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS J. Phys. D: Appl. Phys. 39 (2006) R387–R406 doi:10.1088/0022-3727/39/21/R01 TOPICAL REVIEW Semiconductor nanowires Wei Lu1,4 and Charles M Lieber2,3 1 Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA 2 Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA 3 Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA E-mail: wluee@ Received 6 June 2006 Published 20 October 2006 Online at /JPhysD/39/R387 Abstract Semiconductor nanowires (NWs) represent a unique system for exploring phenomena at the nanoscale and are also expected to play a critical role in future electronic and optoelectronic devices. Here we review recent advances in growth, characterization, assembly and integration of chemically synthesized, atomic scale semiconductor NWs. We first introduce a general scheme based on a metal-cluster catalyzed vapour–liquid–solid growth mechanism for the synthesis of a broad range of NWs and nanowire heterostructures with precisely controlled chemical composition and physical dimension. Such controlled growth in turn results in controlled electrical and optical