40 GHz MMIC Power Amplifier in InP DHBT Technology.ppt

40 GHz MMIC Power Amplifier in InP DHBT Technology Y.Wei, S.Krishnan, M.Urteaga, Z.Griffith, D.Scott, V.Paidi, N.Parthasarathy, M.Rodwell Department of Electrical and Computer Engineering, University of California Introduction Transferred-Substrate Power DHBT Technology Circuit Design Results Conclusion Small-area T.S. DHBTs have high cutoff frequencies. Large Current High Breakdown Voltage Broadband InP DHBT 40 GHz 128 mm2 power amplifier W band power amplifiers in TS InP DHBT technology Continuing work Conclusions yunwei@ece.ucsb.edu tel: 805-893-8044, fax 805-893-3262 Outline LEC 2002 UCSB Introduction LEC 2002 Applications for power amplifiers in Ka band satellite communication systems wireless LANs local multipoint distribution system personal communications network links and digital radio MMIC Amplifiers in this frequency band Kwon et. al., IEEE MTT, Vol.48, No. 6, June. 2000 3 stage HEMT, class AB, Pout=1 W, Gain=15 dB, PAE=28.5%, size=9.5 mm2 This Work: Single stage cascode InP DHBT, class A, Pout=50 mW, Gain=7 dB, PAE=12.5% size=0.42 mm2 Transferred-Substrate HBT MMIC fabrication MBE DHBT layer structure Band profile at Vbe=0.7 V, Vce=1.5 V InP 8E17 Si 300 ? emitter InGaAs 1E19 Si 500 ? Grade 1E19 Si 200 ? InP 1E19 Si 900 ? Grade 8E17 Si 233 ? Grade 2E18 Be 67 ? InGaAs 4E19 Be 400 ? Grade 1E16 Si 480 ? InP 2E18 Si 20 ? InP 1E16 Si 2500 ? Multiple stop etch layers Buffer layer 2500 ? base collector substrate 400 ? InGaAs base 3000 ? InP collector UCSB Sangmin Lee BVCEO = 8 V at JE =0.4 mA/?m2 fmax = 462 GHz, ft = 139 GHz Vce(sat) ~1 V at 1.8 mA/?m2 Design difficulties with large-area power DHBTs UCSB Yun Wei ARO MURI Thermal instability further increasescurrent non-uniformity Ic Temperature collector SiN emitter contact base poly BCB BCB Metal strip Au Via Steady state current and temperature distribution when thermally stable base feed sheet resistance: ?s= 0.3 ?/ significant