Zn靶与掺铝ZnO靶共溅射制备ZnO：Al薄膜及其性能.pdfVIP

第 22卷第4期 中国有色金属学报 2012年4月 Vb1．22No．4 TheChineseJournalofNonferrousMetals Apr．2012 文章编号：1004—0609(2012)04-1119-07 Zn靶与掺铝ZnO靶共溅射制备ZnO：AI薄膜及其性能 赵联波，刘芳洋，邹 忠，张治安，欧阳紫靛，赖延清，李 劫，刘业翔 (中南大学 冶金科学与工程学院，长沙 410083) 摘 要：采用zn靶和ZnO(掺2％A12O3(质量分数))陶瓷靶在玻璃衬底上共溅射沉积Al掺杂ZnO薄膜，即ZnO：A1 透明导电薄膜，研究Zn靶溅射功率( 90、和衬底温度(室温、100℃和200℃)对薄膜结构、形貌、光学和电学 性能的影响。结果表明：按双靶共溅射工艺制备的ZnO：A1薄膜的晶体结构均为六角纤锌矿结构，且随着Zn靶溅 射功率的增加，薄膜的结晶质量呈现出先改善后变差的规律，薄膜中的载流子浓度逐渐升高，电阻率逐渐降低， 而薄膜的光学性能受其影响不大；随着衬底温度的升高，薄膜的结晶性能得到改善，薄膜的可见光透过率增强， 电阻率降低。 关键词：ZnO：A1薄膜；磁控溅射；Zn靶功率；衬底温度；光电性能 中图分类号：O782 文献标志码：A PropertiesofZnO：AIthinfilmsdepositedbyCO—sputteringwith ZntargetandAI—dopedZnO target ZHAO Lian-bo，LIU Fang-yang，ZOU Zhong，ZHANGZhi-an，OUYANG Zi-dian，LAIYan-qing，LIJie，LIUYe-xiang (SchoolofMetallurgicalScienceandEngineering，CentralSouthUniversity,Changsha410083，China) Abstract：TheAI-dopedZnO (AZO)rtansparentconductiveminfilmsweredeposited onglasssubsrtatesby co-sputteringwithZntargetandZnOceramictarget．Theeffectsofsputteringpower(0—90、 ofZntargetnadsubsrtate temperatureonstructure，surface，opticalandelectricalpropertieswereinvestigated．Th eresultsindicatethataIlZnO：A1 htinfilmsobtainedbyCO—sputteringshow hexagonalstructure．AndwithhteincreaseofZntargetsputteringpower,the film crystallizationqualiyt isimprovedearlierandthendeterioratedgradually,htecarrierconcentrationalsoincreases， andhteresistiviytoffilmsloweraccordingly．ButtheeffectisnotobviousforZntragetpoweronopticalpropertiesof fiml s．Whilewiht theriseofsubstratetemperature，htecrystallizationofthinfimlsisimproved，theopticalrtnasmittance isenhnacednadhteresistivityisreduced． Keywords：ZnO：AIthinfilms；magnetronsputtering；poweronZntarget；substratetemperature；opticalandelectrical pro