一种新型高压Triple+RESURF+SOI+LDMOS.pdfVIP

Vol. 32,No. 7 JournalofSemiconductors July2011 Anewhigh voltage SOI LDMOS with tripleRESURFstructure Hu Xiarong(胡夏融) ,Zhang Bo(张波),Luo Xiaorong(罗小蓉),YaoGuoliang(姚国亮), Chen Xi(陈曦),and Li Zhaoji(李肇基) State Key Laboratory of ElectronicThin Films and Integrated Devices, UniversityofElectronicScienceandTechnology of China, Chengdu 610054, China Abstract: AnoveltripleRESURF(T-resurf)SOILDMOSstructureisproposed.ThisstructurehasaP-typeburied layer. Firstly, the depletion layer can extend on both sides of the P-buried layer, serving as a triple RESURF and leadingtoahighdriftdopingandalowon-resistance.Secondly,atahighdopingconcentrationofthedriftregion, the P-layer can reduce high bulk electric field in the drift region and enhance the vertical electric field at the drain side,whichresultsinuniformbulkelectricfielddistributionsandanenhancedBV.Theproposedstructureisused in SOI devices for the first time. The T-resurf SOI LDMOS with BV 315 V is obtained by simulation on a 6 m-thick SOI layer over a 2 m-thick buried oxide layer, and its sp is reduced from 16.5 to 13.8 mcm in comparison with the double RESURF (D-resurf) SOI LDMOS. When the thickness of the SOI layer increases, T-resurf SOI LDMOS displays a more obvious effect on the enhancement of BV /on. It reduces sp by 25% in 400 VSOILDMOS and by 38% in 550 V SOI LDMOS compared with the D-resurf structure. Keywords: SOILDMOS;double resurf; triple resurf; REBULF; breakdown