专业英语1020100512.pptVIP

专业英语-第十讲 李聪 2010-05-12 cong.li@mail.xidian.edu.cn Translation - High level injection effect（P116） Listen: Hybrid-pi equivalent circuit Transistors are often used to amplify small signals, so it is important to have some model to describe the way a transistor operates in an amplifying circuit. We assume that the transistor has suitable steady bias voltages and currents, and shall expect the values of the components of the equivalent circuit to depend on the quiescent conditions. We wish our model to apply over a wide range of frequency with reasonable accuracy. Many small-signal equivalent circuits have been suggested for transistors, and indeed they can be transformed one into another. Here we examine the hybrid-pi model, because its elements can be related to the physical processes occurring in the transistor. MOS transistor history * * The transistor theory considered thus far has relied on the low-level injection approximation: that majority-carrier populations under bias are essentially unperturbed from their values at thermal equilibrium. As transistors are biased more heavily in the active mode, violations of the low-level injection assumption become apparent. The exponential dependence of collector current on voltage predicted by exp(eVEB/kT) is seen in Figure 11.4 to be valid over nearly eight decades of current until it deviates with high bias on the base-emitter junction. One cause for the deviation is high-level injection into the base. As VBE increases, the injected minority carrier concentration may approach, or even become larger than, the majority carrier concentration, causing the variation of nB(0) approaching exp(eVBE/2kT). The excess minority carrier concentration in the base, and hence the collector current, will increase at a slower rate with B-E voltage in high injection than low injection. This effect is shown in Figure 11.4. As a result, the common-emitter current gain βF decreases as VBE increase as shown in Fig. 11.5 The transistor theory