Cu-Se复合物半导体薄膜的成分分析.pptVIP

Contents 背景 实验部分 结果讨论 小结 CuInSe2 Cu In Se 第Ⅰ-III-VI族元素化合物半导体，为直接带隙半导体，禁带宽度1.04eV。 CuInSe2薄膜太阳能电池结构 CuInSe2薄膜电池 Cu-Se binary system 重要的材料 光伏太阳能电池 肖特基二极管 CIS的制备 中间产物 前体 溶剂热法 光化学 化学气相沉积（CVD） 电沉积 广泛应用于无机半导体的沉积。薄膜生长：简单、成本低、条件温和、自身可控的生长率和薄膜成分。 Cu-Se合成方法 In this report, we describe a new electroanalytical route using combined EQCM and stripping voltammetry for the compositional analysis of Cu-Se thin films electrodeposited at different potentials. 实验部分 copper sulfate (99%) Selenium dioxide (99.8%) sodium sulfate (99%) sulfuric acid(98%) All chemicals instrumen For voltammetry, EGG Princeton Applied Resea-rch (PAR) 263A:Model M250/270 electrochemist- ry software For EQCM,Seiko EGG Model QCA917:oscillator module(QCA917-11), 9M Hz AT-cut gold-coated qu- artz crystal,Pt counter ele ctrode,Ag/AgCl/3M NaCl reference electrode For flow-EQCM experiments, an EGG Princeton Applied Research Model 273A system was used and frequency changes were displayed on a Kipp and Zonen Model BD111 single pen chart recorder. A Gilson Minipuls 3 peristaltic pump was used to deliver solution to the flow–EQCM system and a Valco Model 6-way slider valve equipped with 0.15 mm i.d. tubing was employed to switch and inject solutions at a nominal flow rate of 0.28 mL/min. The flow rate and a cell volume (about 0.5 mL) were enough for the deposition of thin films considering the concentration of Cu2+ and Se4+ ions. 结果讨论 Figure 1. Linear sweep voltammograms (solid line) and the corresponding EQCM frequency changes (dashed line) for the stripping of (a) Se in 0.1 M Na2SO4 solution. Scan rate: 10 mV/s. (b) Cu2Se in 0.1 M Na2SO4 solution. Scan rate: 10 mV/s. To differentiate the peak due to Se reduction from that arising from Cu2Se reduction, Cu-Se film was electrodeposited at ?0.1 V using 0.1 M H2SO4 containing 10 mM SeO2 and 5 mM CuSO4. After the free Se was removed from the film by applying ?0.7 V for 100 s in 0.1 M Na2SO4 blank electrolyte. Electrodeposition of Cu2Se was confirmed by the cathod