等离子增强化学气相沉积制备氧化硅薄膜的质谱诊断研究.pdfVIP

2008 全国荷电粒子源、粒子束学术会议论文集 等离子增强化学气相沉积制备氧化硅薄膜的质谱诊断研究 张军峰，陈强，，张跃飞，刘福平， 刘忠伟 北京印刷学院印刷包装材料与技术北京市重点实验室等离子体物理及材料研究室 北京 102600 摘要：以六甲基二硅氧烷（（CH ) -Si-O-Si-(CH ) ，HMDSO ）为单体，在等离子增强化学 3 3 3 3 气相沉积制备氧化硅薄膜过程中，研究引起薄膜生长的前驱体、中间产物及活性自由基或分 子。通过四极杆质谱仪对气相中的中间产物及活性粒子进行原位诊断，进行了不同功率、气 压及 O2 与 HMDSO 比例等的影响研究。实验发现：高功率，低气压，及 O2 含量的增加有 利于有机硅化合物的裂解，氧化硅沉积过程中质荷比为 147 的离子是气相反应形成含硅粒子 的主要前驱体，对薄膜的形成起主要作用。 Investigation of Mass Spectrometry diagnosis in SiOx coating produced by PECVD plasma Zhang Junfeng, Chen Qiang, Zhang Yuefei, Liu Fuping, Liu Zhongwei Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication Beijing 102600 Abstract: It is well known that the neutral radicals or small molecules as the precursor grow the film, but which one plays the mainly role depending on the plasma condition and materials deposited. In here with Hexamethyldisiloxane ((CH ) -Si-O-Si-(CH ) , HMDSO) as momomer the 3 3 3 3 plasma enhanced chemical vapor deposition (PECVD) is employed to deposit silicon dioxide. This paper is emphasized on the neutral radicals and samll molecules by quadrupolar mass spectrometer in-situ diagnostic. The influence of operation parameter, such as input power, working pressure, and the gas flow rate of O2 and HMDSO, in pulsed plasma on the film generation are all investigated. The mass spectra reflect the stronger decomposition of monomer molecules with increasing discharge power and decreasing total pressure. Ion 147 is the main radical in plasma phase that responsible for film grown 一．前言 等离子增强化学气相沉积系统制备氧化硅薄膜有着广泛的应用 [1], 而 HMDSO 是应用