Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin fi.pdfVIP

Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films 2 0 ∗ 1 1, 2, 3 † 4 4 1 B. S. Sørensen , J. Sadowski, R. Mathieu , P. Svedlindh, and P. E. Lindelof 0 2 1 Niels Bohr Institute fAFG, Ørsted Laboratory, University of Copenhagen, c e D Universitetsparken 5. DK-2100 Copenhagen, Denmark. 7 2MAX-Lab, Lund University, SE-221 00 Lund, Sweden. 1 3Institute of Physics, Polish Academy of Sciences, ] i al. Lotnik`ow 32/46, PL-02-668 Warszawa, Poland. c s l- 4Department of Materials Science, Uppsala University, r t m Box 534, SE-751, 21 Uppsala, Sweden. . t (Dated: February 6, 2008) a m- Abstract d n We report a clear correspondence between changes in the Curie temperature and carrier density o c upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm [ 1 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As - v 9 GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetore- 9 3 sistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present 2 1 of unknown origin. 2 0 / t PACS numbers: 75.50.Pp, 75.70.-i, 73.50.-h a m - d n o c : v i X r a ∗ E-mail: skov@fys.ku.dk † New adress: ERATO-SSS/JST, Cryogenic Center, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo