《LED lighting level of packaging solutions》.docVIP

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《LED lighting level of packaging solutions》.doc

LED lighting level of packaging solutions / From the point of view of practical application, installation is simple to use, a relatively small volume of high power LED device in most of the lighting applications will replace traditional small power LED device. The small power 200W led floodlighting lamps and lanterns in order to meet the needs of the lighting, must focus on many of the 200W led floodlight to reach the design requirements, but bring the defect is line is extremely complex, heat dissipation not free, in order to balance between each led the current, voltage relationship, must design the complex power supply circuit. In contrast, high power monomer LED power far outweigh the several small power LED power sum, power supply circuit relative simple, heat dissipation structure perfect, stable physical properties. Say so, high power LED device packaging method and packaging material and cannot simply applying traditional small power LED device packaging method and packaging materials. Big dissipation power, large calorific value and high efficiency of the light, LED packaging technology, packaging equipment and packaging material puts forward the new higher requirement. 1, high power LED chip To get high power LED device, it must preparation suitable high power LED chip. International usually manufacturing high power LED chip method has the following kinds: (1) increasing size method. By increasing the effective monomer 200W led floodlight area and size, make through the TCL layer current uniform distribution, in order to achieve the desired light. However, simply increase luminous area cant solve the heat dissipation problem and the problem of light, and cant achieve the desired effect of light and practical application. (2) silicon floor inversion method. The first preparation for eutectic welding of large size LED chip, and at the same time, the size of the preparation of the corresponding silicon floor, and in the silicon base plate made for eutectic s

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