《Application Considerations for Silicon Carbide》.pdf

Application Considerations for SiC MOSFETs January 2011 Application Considerations for Silicon Carbide MOSFETs Bob Callanan, Cree Inc Application Considerations for Silicon Carbide MOSFETs Author: Bob Callanan, Cree, Inc. Introduction Introduction: The silicon carbide (SiC) MOSFET has unique capabilities that make it a superior switch when compared to its silicon counterparts. The advantages of SiC MOSFETs have been documented extensively in the literature [1]. However, there are some unique operating characteristics that need to be understood so that the device can be used to its full potential. Discussion Discussion: The key to successfully applying the SiC MOSFET requires an understanding of the device’s unique operating characteristics. In this section, the characteristics of Cree’s 1200V 80mΩ SiC MOSFET (CMF20120D) will be discussed. Comparisons will be made with other similar silicon devices along with application implications. The intention of this comparison is to illustrate the differences in operating characteristics, not to pick the best device. The comparison silicon devices are as follows: • 900V, 0.12  Si super junction MOSFET (SJMOSFET) Infineon IPW90 R120C3 [2] • 1.2 kV, 20 A trench/field stop (TFS) Si IGBT Fairchild FGA20N120FGD [3]