《Passivation of crystalline silicon using silicon nitride》.pdfVIP

3rd World Conferenceon Phorovolraic E n e r a Conversion May 11-18.2003 Osaka,Jopon 40-C13-01 PASSIVATION OF CRYSTALLINE SILICON USING SILICON NITRIDE Andrts Cuevas, Mark J. K e d and Jan Schmidt2 Faculty of Engineering, The Australian National University, Canberra, Australia Present address: Origin Energy, Adelaide, South Australia 21nstitut fiir Solarenergieforschung HameldEmmenhal (ISFH), Emmerthal, Germany ABSTRACT makes the plasma frequency a very important parameter for this type of reactors, which can in turn be divided in The extraordinary capacity of plasma-enhanced two sub-categories: low-frequency (IO-500 kHr) and high- chemical-vapour-deposited (PECVD) silicon nitride (SIN) frequency (4MHz, with a typical value of 13.56MHz). to passivate the surface of crystalline silicon wafers and, in The main advantage of using a high frequency lies in the the case of multicrystalline silicon, improve the bulk fact that the ions in the plasma cannot follow the material by hydrogenation has attracted a great deal of excitation of the electromagnetic fields, and so ion research and development. This review summarizes the bombardment of thc substrate surface is minimized. The state of the art of surface passivation by PECVD SIN, second major class of reactors is formed by the togethcr with the present undcrstanding of thc physical downstream-remote rystcms, wh