制备工艺参数对TiNxAgTiNx低辐射膜性能的影响.pdfVIP

制备工艺参数对TiNx / Ag/ TiNx 低辐射膜性能的影响/ 蒋 攀等 87 TiNx / Ag/ T iNx * 蒋 攀, 黄佳木, 郝晓培, 董思勤 ( , 400045) 采用射频磁控溅射法在玻璃基片上沉积了TiN / Ag/T iN 低辐射膜, 究了制备工艺参数对低辐射膜 x x 光学性能的影响以及低辐射膜的耐腐蚀性能结果表明, T iN 薄膜可对膜系起到很好的保护作用, 当膜系的T iN x x 保护层厚度为32nm内层T iN 膜厚为16nm(氮气流量为55sccm)Ag 层厚度为16nm 时, 制备的低辐射膜系具有优 x 良的透过率低辐射性能和耐腐蚀性能 TiN / Ag/ T iN x x :T B43 : A Effect of Preparing Parameters on Properties of TiN / Ag/ TiN x x Lowemissivity Film JIANG Pan, HUANG Jiamu, HA Xiaopei, D NG Siqin ( College of Materials Science and Engineering, Chongqing University, Chongqing 400045) Abstract TiN / Ag/ TiN lowe films are deposited on glass slides by magnetron sputtering. The influence of x x deposition parameters on the optical property and the corrosion resistance property of the lowefilms are investigated. The experiment results indicate that when the thickness of the surface TiN film, which is a good protective film from x damage of corrosion, is 32nm, the inner film is 16nm(the N mass flow rate is 55sccm) ,and the Ag film is also 16nm, 2 the lowe film presents a very good corrosionresistance and optical property. Key word