《00001---硫化钼---硒化钼--垂直阵列----2016---nano letter》.pdf

Letter /NanoLett Synthesis of MoS2 and MoSe2 Films with Vertically Aligned Layers Desheng Kong,† Haotian Wang,‡ Judy J. Cha, † Mauro Pasta,† Kristie J. Koski,† Jie Yao, † and Yi Cui*,†,§ †Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States ‡Department of Applied Physics, Stanford University, Stanford, California 94305, United States §Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States S *Supporting Information ABSTRACT: Layered materials consist of molecular layers stacked together by weak interlayer interactions. They often crystallize to form atomically smooth thin films, nanotubes, and platelet or fullerene-like nanoparticles due to the anisotropic bonding. Structures that predominately expose edges of the layers exhibit high surface energy and are often considered unstable. In this communication, we present a synthesis process to grow MoS2 and MoSe2 thin films with vertically aligned layers, thereby maximally exposing the edges on the film surface. Such edge-terminated films are metastable structures of MoS and MoSe , which may find applications in 2 2 diverse catalytic reactions. We have confirmed their catalytic activity in a hydrogen evolution reaction (HER), in which the exchange current density correlates directly with the density of the exposed edge site