《3D Mask Modeling for EUV Lithography》.pdf

3D Mask Modeling for EUV Lithography 1* 2 3 2 2 Julien Mailfert , Christian Zuniga , Vicky Philipsen , Konstantinos Adam , Michael Lam , 1 3 3 4 James Word , Eric Hendrickx , Geert Vandenberghe , Bruce Smith 1 Mentor Graphics Corp., 8005 S.W. Boeckman Rd, Wilsonville, OR 97070, USA 2 Mentor Graphics Corp., 46871 Bayside Parkway Fremont, CA 94538, USA 3 imec, Kapeldreef 75, B-3001 Leuven, Belgium 4 Rochester Institute of Technology, 1 Lomb Memorial Drive, Rochester, NY 14623, USA *contact: jxm2803@ ABSTRACT In this work, 3D mask modeling capabilities of Calibre will be used to assess mask topography impact on EUV imaging. The EUV mask absorber height and the non-telecentric illumination at mask level, modulate the captured intensity from the shadowed mask area through the reflective optics on to the wafer, named as the mask shadowing effect. On the other hand, thinning the mask absorber height results in unwanted background intensity, or called flare. A true compromise has to be taken into account for the height parameter of a EUV mask absorber. We will discuss the state-of-the-art 3D mask modeling capabilities, and will present methodologies to tackle the described EUV mask shadowing effect in