《Precise Control of Temperature Rising Speed of Wafer during Rapid Thermal Processing》.pdf

下载文档 降价啦

2
0
约2.37万字
约 6页
2015-11-12 发布于河南
举报
版权申诉
保障服务

《Precise Control of Temperature Rising Speed of Wafer during Rapid Thermal Processing》.pdf

1、本文档共6页，可阅读全部内容。
2、原创力文档（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。
3、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击这里二次下载。
4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。

JournalofMechanicsEngineeringandAutomation4(2014)359-364 … … PreciseControlofTemperatureRisingSpeedofW afer duringRapidThermalProcessing ShigekiHirasawa，TsuyoshiKawanami，KatsuakiShirai，TetsuyaUrimoto，NaokiMorimoto，AtsushiFujiwara andSadanoriToda DepartmentofMechanicalEngineering,KobeUniversity,Kobe657-8501，Japan Received：March14，2014 ／Accepted：April03，2014／Published：May25，2014 Abstract：Inrapidthermalprocessingofasemiconductorwafer．itisimpo~anttokeepflgiventemperaturerisingspeedofthewafer duringthetemperaturerisingprocess．W emadeallexperimentalapparatustomeasurethetemperaturerisingspeedofaceramicballof 2mm indiameterheatedwithfourhalogenlampheaters．Theheatingrateofthehalogenlampheaterswascontrolledbycomputerto keepagiventemperaturerisingspeedof50。C／swithacontrollingtimeintervalof0．1s．Weexaminedtheeffectofvariousheating controlmethodsontheerrorofthetemperaturerisingspeedoftheceramicbal1．Wefoundthatflcombinedmethodofcontrolwith preparedcorrelationandPID (proportionalintegralderivative)controlisagoodmethodtodecreasetheerrorofthetemperaturerising speed．Theaverageerrorofthetemperaturerisingspeedis0．5。C／s．andtherepetitionerrorisalmostzeroforthetemperaturerising speedof50。C／sfrom 330 。C to370。C．W ealsomeasuredtheeffectsofartificialcontroldelaytimeandmeasuringerrorofthe monitoringtemperatureontheerrorofthetemperaturerisingspeed． Keywords：Electronicequipmentmanufacturing，rapidheating，heattreatment，temperaturecontrol，PID control 1．IntrOducti0n ctor heater In the heating process of manufacturing semiconductors，siliconwafersareheatedto 1，000。C todiffuseimpurityatoms(arsenic，etc．)intothesilicon substrateandtooxidizeit．Schematicviewsofat