InGaAs量子点红外探测器_唐光华.pdfVIP

Expert Forum In( Ga) As 量子点红外探测器 唐光华, 徐 波, 王占国 ( 中国科学院 半导体研究所 半导体材料科学 点实验室, 北京 1000 83) : 讨论了量子点红外探测器的工作原理性能参数暗电流形成机理及其优势, 介绍了In ( Ga) As 量子点红外探测器的主要结构性能和取得的最新结果, 最后探讨了如何进 一步提高 量子点红外探测器的性能指出要实现量子点红外探测器的优势, 必须优化量子点生长条件, 让 量子点更小更均匀和密度更大; 必须提高量子点的掺杂控制和掺杂水平, 实现每 个量子点中有 1~ 2 个电子; 必须降低量子点生长中引入的应力, 增加量子点有源区的层数; 此外, 还必须寻 求新的量子点红外探测器结构 : 量子点; 量子点红外探测器; 暗电流; 掺杂控制; 性能参数 : O47 11 1; TN2 15 : A : 1671-4 776 ( 2009) 10-0 577- 10 In( Ga) As Quantum-Dot Infrared Photodetectors T ang Guanghua, Xu Bo, W ang Zhanguo (Key Laboratory of Semiconductor Materials Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beij ing 1000 83, China) Abstract: T he operation principle, characteristic parameters, dar current mechanism and potential advantages of quantum dot infrared photodetectors ( QDIPs) are discussed. Then the main structures, performances and latest results of In ( Ga) As Q DIPs from literatures are introduced. Finally , how to improve the performances of QDIPs are proposed. T o achieve the anticipated advantages of QDIPs, it is necessary to optimize quantum-dots ( Q Ds) growth condi- tions to ma e the dots smaller, more uniform and denser, and improve QDs doping controls and doping levels to get 1- 2 electrons in one QD. It is also needed to reduce the induced stress in the QDs growth, increase the layer number of the QDs active region, and see new QDIPs struc- tures. Key words: quantum dot; quantu