Radiation and COTS at ground level》.pdf

Microelectronics Reliability 55 (2015) 2147–2153 Contents lists available at ScienceDirect Microelectronics Reliability j ournal homepage: www.el sevier.c om/l ocate/ mr Radiation and COTS at ground level J.L. Autran ⁎, D. Munteanu Aix-Marseille University CNRS, IM2NP (UMR 7334), Faculté des Sciences – Service 142, Avenue Escadrille Normandie Niémen, F-13397 Marseille Cedex 20, France a r t i c l e i n f o a b s t r a c t Article history: This tutorial surveys single event effects (SEE) induced by terrestrial cosmic rays on current commercial CMOS Received 26 May 2015 technologies. After describing the natural radiation environment at ground and atmospheric levels, the tutorial Received in revised form 20 June 2015 describes the physics of SEEs, from the main mechanisms of interaction between atmospheric radiation Accepted 21 June 2015 (neutrons, protons, muons) and circuit materials to the electrical response of transistors, cells and complete cir- Available online 7 July 2015 cuits. SEE characterization using accelerated and real-time tests is examined, as well as modeling and numerical Keywords: simulation issues. Special emphasis finally concerns the radiation response of advanced technologies, including Single event effects (SEE) deca-nanometer bulk, FD-SOI and FinFET families. Radiation effects