Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals》.pdf

Journal of Alloys and Compounds 587 (2014) 733–738 Contents lists available at ScienceDirect Journal of Alloys and Compounds journal homepage: www.else /locate/jalcom Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals K. Sivaji a,⇑, E. Viswanathan a, S. Selvakumar a,b, S. Sankar c, D. Kanjilal d a Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025, India b University of Tsukuba Tandem Accelerator Complex, University of Tsukuba, Tennodai 1-1-1, Ibaraki 305-8577, Japan c Department of Physics, MIT Campus, Anna University, Chennai 600044, India d Inter-University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067, India a r t i c l e i n f o a b s t r a c t Article history: In this report, the effect of disorder accumulation in Swift Heavy Ion (SHI) irradiated 6H-SiC is distin- Received 28 May 2013 guished with respect to the irradiation temperature, viz., 80 K and 300 K. The samples were irradiated Received in revised form 30 September 12+ 12 13 2 with 150 MeV Ag ions with different fluences ranging from 1 10 to 5 10 ions/cm . The struc- 2013 tural and optical properties of N-doped 6H-SiC in its pristine condition and after SHI irradiation have been Accepted 4 November 2013 Available online 12 November 2013