Radiation enhanced diffusion of Nd in UO2》.pdf

Journal of Nuclear Materials 466 (2015) 588 e596 Contents lists available at ScienceDirect Journal of Nuclear Materials journal homepage: /locate/jnucmat Radiation enhanced diffusion of Nd in UO2 * Xiaochun Han, Brent J. Heuser Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801, USA a r t i c l e i n f o a b s t r a c t Article history: Single crystal UO2 thin films with Nd as tracer elements in the film mid-plane have been grown on yttria- Received 5 November 2014 stabilized zirconia (YSZ) substrates. The films were irradiated with 1.8 MeV Krþ ions in the temperature Received in revised form range from 400 C to 1113 C, where an evident enhanced diffusion was found in UO . The temperature 2 6 August 2015 dependent measurements have shown an activation energy of 0.56 ± 0.04 eV below 800 C, and Accepted 7 August 2015 1.9 ± 0.3 eV above 900 C. The rate-dependent measurements have shown a linear dependence on the Available online 29 August 2015 radiation flux, which indi