Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement》.pdfVIP

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Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement》.pdf

Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement》.pdf

Home Search Collections Journals About Contact us My IOPscience Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement This content has been downloaded from IOPscience. Please scroll down to see the full text. 2007 Jpn. J. Appl. Phys. 46 2062 (/1347-4065/46/4S/2062) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 18 This content was downloaded on 09/10/201

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