105 nm gate length pmosfets with highk and metal gate fabricated in a si process line on 200 mm geoi wafers 105纳米栅极长度的高k金属栅pmosfet的制作在硅工艺线在200毫米晶圆机械机电geoi.pdfVIP

Solid-State Electronics 52 (2008) 1285–1290 Contents lists available at ScienceDirect Solid-State Electronics journal homepage: www.el /locate/sse 105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers C. Le Royer *, L. Clavelier, C. Tabone, K. Romanjek, C. Deguet, L. Sanchez, J.-M. Hartmann, M.-C. Rou